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profet ? bts 432 d2 semiconductor group page 1 of 14 1999-mar.-22 smart highside power switch features load dump and reverse battery protection 1 ) clamp of negative voltage at output short-circuit protection current limitation thermal shutdown diagnostic feedback open load detection in on-state cmos compatible input e lectro s tatic d ischarge ( esd ) protection loss of ground and loss of v bb protection 2) overvoltage protection undervoltage and overvoltage shutdown with auto- restart and hysteresis application m c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads all types of resistive, inductive and capacitve loads replaces electromechanical relays and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, integrated in smart sipmos a chip on chip technology. fully protected by embedded protection functions. + v bb in st signal gnd esd profet a out gnd logic voltage sensor voltage source open load detection short circuit detection charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 2 4 1 3 5 load gnd load v logic overvoltage protection r bb 1) no external components required, reverse load current limited by connected load. 2) additional external diode required for charged inductive loads product summary v load dump 80 v v bb - v out avalanche clamp 58 v v bb ( operation ) 4.5 ... 42 v v bb (reverse) -32 v r on 38 m w i l ( scp ) 44 a i l(scr) 35 a i l(iso) 11 a 1 5 straight leads 1 5 smd 5 standard
bts 432 d2 semiconductor group page 2 1999-mar.-22 pin symbol function 1 gnd - logic ground 2 in i input, activates the power switch in case of logical high signal 3v bb + positive power supply voltage, the tab is shorted to this pin 4 st s diagnostic feedback, low on failure 5 out (load, l) o output to the load maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 3) v bb 63 v load dump protection v loaddump = u a + v s , u a = 13.5 v r i = 2 w , r l = 1.1 w , t d = 200 ms, in= low or high v s 3 ) 66.5 v load current (short-circuit current, see page 4) i l self-limited a operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc) p tot 125 w inductive load switch-off ener gy dissipation, single pulse t j =150 c: e as 1.7 j electrostatic dischar g e capabilit y ( esd ) (human body model) v esd 2.0 kv input voltage (dc) v in -0.5 ... +6 v current through input pin (dc) current through status pin (dc) see internal circuit diagrams page 6... i in i st 5.0 5.0 ma thermal resistance chip - case: junction - ambient (free air): r thjc r thja 1 75 k/w smd version, device on pcb 4) : tbd 3) v s is setup without dut connected to the generator per iso 7637-1 and din 40839 4 ) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m m thick) copper area for v bb connection. pcb is vertical without blown air.
bts 432 d2 semiconductor group page 3 1999-mar.-22 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (pin 3 to 5) i l = 2 a t j =25 c: t j =150 c: r on -- 30 55 38 70 m w nominal load current (pin 3 to 5) iso proposal: v on = 0.5 v, t c = 85 c i l(iso) 911 --a output current (pin 5 ) while gnd disconnected or gnd pulled up, v in = 0, see diagram page 7, t j =-40...+150c i l(gndhigh) -- -- 1 ma turn-on time to 90% v out : turn-off time to 10% v out : r l = 12 w , t j =-40...+150c t on t off 50 10 160 -- 300 80 m s slew rate on 10 to 30% v out , r l = 12 w , t j =-40...+150c d v /dt on 0.4 -- 2.5 v/ m s slew rate off 70 to 40% v out , r l = 12 w , t j =-40...+150c -d v /dt off 1--5v/ m s operating parameters operating voltage 5 ) t j =-40...+150c: v bb(on) 4.5 -- 42 v undervoltage shutdown t j =-40...+150c: v bb(under) 2.4 -- 4.5 v undervoltage restart t j =-40...+150c: v bb(u rst) -- -- 4.5 v undervolta g e restart of char g e pump see diagram page 12 t j =-40...+150c: v bb(ucp) -- 6.5 7.5 v undervolta g e h y steresis d v bb(under) = v bb(u rst) - v bb(under) d v bb(under) -- 0.2 -- v overvoltage shutdown t j =-40...+150c: v bb(over) 42 -- 52 v overvoltage restart t j =-40...+150c: v bb(o rst) 42 -- -- v overvoltage hysteresis t j =-40...+150c: d v bb(over) -- 0.2 -- v overvoltage protection 6 ) t j =-40c: i bb =40 ma t j =25...+150c: v bb(az) 60 63 -- 67 -- v standby current (pin 3) t j =-40...+25c : v in =0, i st =0 , t j =150c: i bb(off) -- -- 12 18 25 60 m a leakage output current (included in i bb ( off ) ) v in =0 i l(off) -- 6 -- m a operating current (pin 1) 7) , v in =5 v i gnd -- 1.1 -- ma 5 ) at supply voltage increase up to v bb = 6.5 v typ without charge pump, v out ? v bb - 2 v 6) see also v on(cl) in table of protection functions and circuit diagram page 7. meassured without load . 7 ) add i st , if i st > 0, add i in , if v in >5.5 v
bts 432 d2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 4 1999-mar.-22 protection functions initial peak short circuit current limit ( pin 3 to 5 ) 8 ) , ( max 400 m s if v on > v on(sc) ) i l(scp) t j = -40c: t j =25c: t j =+150c: -- -- 24 -- 44 -- 74 -- -- a repetitive short circuit current limit i l(scr) t j = t jt (see timing diagrams, page 10) 22 35 -- a short circuit shutdown dela y after input pos. slope v on > v on(sc) , t j = -40..+150c: min value valid only, if input "low" time exceeds 30 m s t d(sc) 80 -- 400 m s output clamp ( inductive load switch off ) at v out = v bb - v on(cl) , i l = 30 ma v on(cl) -- 58 -- v short circuit shutdown detection volta g e (pin 3 to 5) v on(sc) -- 8.3 -- v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis d t jt -- 10 -- k inductive load switch-off energy dissipation 9) , t j start = 150 c, single pulse v bb = 12 v: v bb = 24 v: e as e load12 e load24 -- -- 1.7 1.3 1.0 j reverse battery (pin 3 to 1) 10 ) - v bb -- -- 32 v integrated resistor in v bb line r bb -- 120 -- w diagnostic characteristics open load detection current t j =-40 c : (on-condition) t j =25..150c: i l (ol) 2 2 -- -- 900 750 ma 8 ) short circuit current limit for max. duration of 400 m s, prior to shutdown (see t d(sc) page 4) 9) while demagnetizing load inductance, dissipated energy in profet is e as = v on(cl) * i l (t) dt, approx. e as = 1 / 2 * l * i 2 l * ( v on(cl) v on(cl) - v bb ), see diagram page 8 10 ) reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. reverse current i gnd of ? 0.3 a at v bb = -32 v through the logic heats up the device. time allowed under these condition is dependent on the size of the heatsink. reverse i gnd can be reduced by an additional external gnd-resistor (150 w ). input and status currents have to be limited (see max. ratings page 2 and circuit page 7).
bts 432 d2 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max semiconductor group page 5 1999-mar.-22 input and status feedback 11 ) input turn-on threshold volta g e t j = -40..+150c: v in(t+) 1.5 -- 2.4 v input turn-off threshold volta g e t j = -40..+150c: v in(t-) 1.0 -- -- v input threshold hysteresis d v in(t) -- 0.5 -- v off state input current (pin 2) v in = 0.4 v: i in(off) 1--30 m a on state input current (pin 2) v in = 3.5 v: i in(on) 10 25 50 m a status invalid after positive input slope (short circuit) t j =-40 ... +150c: t d(st sc) 80 200 400 m s status invalid after positive input slope (open load) t j =-40 ... +150c: t d(st) 350 -- 1600 m s status output ( cmos ) t j =-40...+150c, i st = - 50 m a: t j =-40...+150c, i st = +1.6 ma: max. status current for current source (out): valid status output, current sink (in) : t j =-40...+150c v st(high) 12 ) v st(low) -i st +i st 13) 4.4 -- -- -- 5.1 -- -- -- 6.5 0.4 0.25 1.6 v ma 11) if a ground resistor r gnd is used, add the voltage drop across this resistor. 12 ) v st high ? v bb during undervoltage shutdown 13 ) no current sink capability during undervoltage shutdown
bts 432 d2 semiconductor group page 6 1999-mar.-22 truth table input- output status level level 432 d2 432 e2/f2 432 i2 normal operation l h l h h h h h h h open load l h 14 ) h h l h l l h short circuit to gnd l h l l h l h l h l short circuit to v bb l h h h h h (l 15 ) ) h h (l 15) ) l h overtem- perature l h l l l l l l l l under- voltage l h l l l 16 ) l 16) h h l 16) l 16) overvoltage l h l l l l h h l l l = "low" level h = "high" level 14 ) power transistor off, high impedance 15 ) low resistance short v bb to output may be detected by no-load-detection 16 ) no current sink capability during undervoltage shutdown terms profet v in st out gnd bb v st v in i st i in v bb i bb i l v out i gnd v on 1 2 4 3 5 r gnd input circuit (esd protection) in gnd i r zd zd i i i1 i2 esd- zd i1 6.1 v typ., esd zener diodes are not designed for continuous current status output st v logic gnd esd- zd zener diode: 6.1 v typ., max 5 ma, v logic 5 v typ, esd zener diodes are not designed for continuous current short circuit detection fault condition: v on > 8.3 v typ.; in high short circuit detection logic unit + v bb out v on
bts 432 d2 semiconductor group page 7 1999-mar.-22 inductive and overvoltage output clamp + v bb out gnd v z v on v on clamped to 58 v typ. overvolt. and reverse batt. protection + v bb v out in st bb r signal gnd logic profet v z r gnd gnd in r st r r bb = 120 w typ . , v z +r bb *40 ma = 67 v typ., add r gnd , r in , r st for extended protection open-load detection on-state diagnostic condition: v on < r on * i l(ol) ; in high open load detection logic unit + v bb out on v on gnd disconnect profet v in st out gnd bb v bb 1 2 4 3 5 v in v st v gnd any kind of load. in case of input=high is v out ? v in - v in(t+) . due to v gnd >0, no v st = low signal available. gnd disconnect with gnd pull up profet v in st out gnd bb v bb 1 2 4 3 5 v gnd v in v st any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. v bb disconnect with charged inductive load profet v in st out gnd bb v bb 1 2 4 3 5 high profet v in st out gnd bb v bb 1 2 4 3 5 high
bts 432 d2 semiconductor group page 8 1999-mar.-22 inductive load switch-off energy dissipation profet v in st out gnd bb = e e e e as bb l r e load energy dissipated in profet e as = e bb + e l - e r . e load < e l , e l = 1 / 2 * l * i 2 l
bts 432 d2 semiconductor group page 9 1999-mar.-22 options overview all versions: high-side switch, input protection, esd protection, load dump and reverse battery protection , protection against loss of ground type bts 432d2 432e2 432f2 432i2 logic version d ef i overtemperature protection t j >150 c, latch function 17 ) 18 ) t j >150 c, with auto-restart on cooling x x xx short-circuit to gnd protection switches off when v on >8.3 v typ. 17) (when first turned on after approx. 200 m s) x xxx open load detection in off-state with sensing current 30 m a typ. in on-state with sensing voltage drop across power transistor x xx x undervoltage shutdown with auto restart x xxx overvoltage shutdown with auto restart x xxx status feedback for overtemperature short circuit to gnd short to v bb open load undervoltage overvoltage x x - 19) x x x x x - 19 ) x - - x x - 19) x - - x x x x x x status output type cmos open drain x xx x output ne g ative volta g e transient limit (fast inductive load switch off) to v bb - v on(cl) x xxx load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) x x x x 17 ) latch except when v bb - v out < v on(sc) after shutdown. in most cases v out = 0 v after shutdown ( v out 1 0 v only if forced externally). so the device remains latched unless v bb < v on(sc) (see page 4). no latch between turn on and t d(sc) . 18) with latch function. reseted by a) input low, b) undervoltage, c) overvoltage 19 ) low resistance short v bb to output may be detected by no-load-detection
bts 432 d2 semiconductor group page 10 1999-mar.-22 timing diagrams figure 1a: v bb turn on: in v out t v st cmos bb a a t d(bb in) in case of too early v in =high the device may not turn on (curve a) t d(bb in) approx. 150 m s figure 2a: switching a lamp, in st out l t v i figure 2b: switching an inductive load in st l t v i *) out t d(st) i l(ol) *) if the time constant of load is too large, open-load-status may occur figure 3a: turn on into short circuit, in st out l t v i t d(sc) t d(sc) approx. 200 m s if v bb - v out > 8.3 v typ.
bts 432 d2 semiconductor group page 11 1999-mar.-22 figure 3b: turn on into overload, in st l t i l(scr) i l(scp) i heating up may require several milliseconds , v bb - v out < 8.3 v typ. figure 3c: short circuit while on: in st out l t v i **) **) current peak approx. 20 m s figure 4a: overtemperature, reset if (in=low) and ( t j < t jt ) in st out j t v t *) st goes high , when v in =low and t j bts 432 d2 semiconductor group page 12 1999-mar.-22 figure 5b: open load: detection in on-state, open load occurs in on-state in st out l t v i open normal normal t d(st ol1) t d(ol st2) t d(st ol1) = tbd m s typ., t d(st ol2) = tbd m s typ figure 6a: undervoltage: in v out t v bb st cmos v v bb(under) bb(u rst) bb(u cp) v figure 6b: undervoltage restart of charge pump v on [v] bb(under) v v bb(u rst) v bb(over) v bb(o rst) v bb(u cp) off on off v on(cl) v bb v on v bb [v] charge pump starts at v bb(ucp) =6.5 v typ. figure 7a: overvoltage: in v out t v bb st on(cl) v v bb(over) v bb(o rst)
bts 432 d2 semiconductor group page 13 1999-mar.-22 package and ordering code all dimensions in mm standard to-220ab/5 ordering code bts 432 d2 q67060-s6201-a2 to-220ab/5, option e3043 ordering code bts 432 d2 e3043 q67060-s6201-a4 smd to-220ab/5, opt. e3062 ordering code bts432d2 e3062a t&r: q67060-s6201-a5
bts 432 d2 semiconductor group page 14 1999-mar.-22 published by siemens ag, bereich halbleiter vetrieb, werbung, balanstra?e 73, d-81541 mnchen ? siemens ag 1999. all rights reserved attention please! as far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. the information describes a type of component and shall not be considered as warranted characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the semiconductor group offices in germany or the siemens companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest siemens office, semiconductor group. siemens ag is an approved cecc manufacturer. packing : please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorised for such purpose! critical components 20 ) of the semiconductor group of siemens ag, may only be used in life supporting devices or systems 21 ) with the express written approval of the semiconductor group of siemens ag. 20) a critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 21) life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. if they fail, it is reasonably to assume that the health of the user or other persons may be endangered.

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